3 results
Effect of leakage current induced by B+H+ implantation in the isolation process for self passivated GaAlAs/GaInP/ GaAs HBT
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- Journal:
- The European Physical Journal - Applied Physics / Volume 19 / Issue 3 / September 2002
- Published online by Cambridge University Press:
- 12 September 2002, pp. 195-199
- Print publication:
- September 2002
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Surface passivation of composition graded base in GaAlAs/GaInP/GaAs heterojunction bipolar transistor
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- Journal:
- The European Physical Journal - Applied Physics / Volume 6 / Issue 3 / June 1999
- Published online by Cambridge University Press:
- 15 June 1999, pp. 299-301
- Print publication:
- June 1999
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Investigation on base surface recombination in Self Passivated GaAlAs/GaInP/GaAs Heterojunction Bipolar Transistor
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- Journal:
- The European Physical Journal - Applied Physics / Volume 4 / Issue 1 / October 1998
- Published online by Cambridge University Press:
- 15 October 1998, pp. 27-29
- Print publication:
- October 1998
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